Nano mosfet with trench bottom oxide shielded and third dimensional p-body contact

ABSTRACT

A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.

FIELD OF THE INVENTION

This invention relates in general to semiconductor power field effecttransistor devices and in particular relates to new configurations andmethods for manufacturing improved nano trench Metal-Oxide SemiconductorField Effect Transistor (MOSFET) devices.

BACKGROUND OF THE INVENTIONS

Nowadays, trench-type MOSFET devices are broadly used as power witchesin electronic appliance. The difference between the trench-type MOSFETdevice and the traditional MOSFET device is that the gate structure ofthe former is formed in a trench to minimize the area of the MOSFETdevice, thereby enhancing the density of the MOSFET device and reducingthe on-resistance. However, thinning the gate oxide layer to enhance thecurrent drive renders the gate oxide layer more easily affected by thepunch-through effect.

Conventional technologies to configure and manufacture high voltagesemiconductor power devices are still confronted with difficulties andlimitations to further improve the performances due to differenttradeoffs. In the vertical semiconductor power devices such astrench-type MOSFET device, there is a tradeoff between the drain tosource resistance, i.e., on-state resistance, commonly represented byR_(ds)A (i.e., R_(ds) X Active Area) as a performance characteristic,and the breakdown voltage sustainable of the power device.

Several device configurations have been explored in order to resolve thedifficulties and limitations caused by these performance tradeoffs. Itis also known that a thick bottom oxide is desirable at the bottom ofthe trench in order to avoid gate oxide damage during breakdown process.Also, having a thick bottom oxide lowers the gate to drain capacitance.In this approach, a silicon dioxide layer is grown on the exposedsilicon at the bottom of the trench. This growth is typically performedusing thermal oxidation. However, a drawback of such a technique is thatthermal oxidation increases the thermal budget required in the process.

Conventional shielded gate trench (SGT) MOSFET structure also lowerreversed transfer capacitance C_(rss), which equals to the MOSFETgate-to-drain capacitance C_(gd). Shielded gate trench MOSFETs arepreferred for certain applications over conventional MOSFETs andconventional trench MOSFETs because they provide several advantageouscharacteristics. Shielded gate trench MOSFETs exhibit reducedgate-to-drain capacitance C_(gd), reduced on-resistance R_(DSon), andincreased breakdown voltage of the transistor. For conventional trenchMOSFETs, the placement of many trenches in a channel, while decreasingthe on-resistance, also increases the overall gate-to-drain capacitanceC_(gd). Introducing a shielded gate trench MOSFET structure remediesthis issue by shielding the gate from the electric field in the driftregion with a shield electrode tied to the source potential, therebysubstantially reducing the gate-to-drain capacitance. The shielded gatetrench MOSFET structure also provides the added benefit of a highermajority carrier concentration in the drift region that improves thedevice's breakdown voltage and hence lower on-resistance. However, theSGT MOSFET structure presents challenges in forming the dielectricisolation between the shield electrode and gate electrode, unclampedinductive switching (UIS) challenges, and thick shield oxide requirementto optimize breakdown voltage.

Another conventional technique to improve the breakdown voltage andlower the gate to drain capacitance around the trench bottom is formingthick bottom oxide in the trench gate and floating P-dopant islandsunder the trench gate to improve the electrical field shape. The chargecompensation of the P-dopant in the floating islands enables theincreasing the N-epitaxial doping concentration, thus reduce the RdsA.In addition, the thick bottom oxide in the trench gate lowers the gateto drain coupling, thus lower the gate to drain charge Q_(gd). Thedevice further has the advantage to support a higher breakdown voltageon both the top epitaxial layer and the lower layer near the floatingislands. However, the presence of floating P region causes higherdynamic on resistance during switching. In addition, high density TrenchMOSFET requires self align contact which is a challenging process.Furthermore, even use of a self aligned contact structure limits thecell pitch around 0.8-0.85 μm.

U.S. Pat. No. 5,168,331 to Hamza Yilmaz discloses ametal-oxide-semiconductor field effect transistor (MOSFET) constructedin a trench or groove configuration provided with protection againstvoltage breakdown by the formation of a shield region adjacent to theinsulating layer which borders the gate of the transistor. The shieldregion is either more lightly doped than, or has a conductivity oppositeto, that of the region in which it is formed, normally the drift ordrain region, and it is formed adjacent to a corner on the boundarybetween the insulating layer and the drift or drain region, wherevoltage breakdown is most likely to occur.

U.S. Pat. No. 7,265,415 to Shenoy et al. discloses a trench MOS-gatedtransistor that includes a first region of a first conductivity typeforming a P-N junction with a well region of a second conductivity type.The well region has a flat bottom portion and a portion extending deeperthan the flat bottom portion. A gate trench extends into the wellregion. Channel regions extend in the well region along outer sidewallsof the gate trench. The gate trench has a first bottom portion whichterminates within the first region, and a second bottom portion whichterminates within the deeper portion of the well region such that whenthe transistor is in an on state the deeper portion of the well regionprevents a current from flowing through those channel region portionslocated directly above the deeper portion of the well region.

U.S. Pat. No. 6,359,306 to Hideaki Ninomiya discloses a trench-MOS gatestructure device that includes a first conductivity-type base layer; asecond conductivity-type base layer formed on the firstconductivity-type layer; a first conductivity-type source layer formedon the second conductivity-type base layer; a plurality of firsttrenches parallel to each other and penetrating through the firstconductivity-type source layer and the second conductivity-type baselayer and ending in the first conductivity-type base layer. One gateelectrode is formed in each trench. A plurality of second trenchespenetrate through the first conductivity-type source layer and end inthe second conductivity-type base layer with a main electrode formed ineach trench. Portions of the second trenches and portions of the firstconductivity-type source layer are alternatively arranged in regionsbetween the first trenches. This trench-MOS gate structure device willenable high packing density thus low specific on resistance (specific onresistance=Die Area times on resistance of the die), however thisstructure will be extremely fragile as soon as device goes intoavalanche breakdown. In addition, built-in parasitic NPN BipolarJunction Transistor (BJT) will be triggered to turn on locally showing anegative resistance. This effect is sometimes referred to as the Bipolartransistor snap back phenomenon. The parasitic NPN BJT is most likelytriggered first in a smaller area of the chip causing hugging of all thecurrent to the smaller area thus destruction of the device by excessivelocalized heating.

It is within this context that embodiments of the present inventionarise.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects and advantages of the invention will become apparent uponreading the following detailed description and upon reference to theaccompanying drawings in which:

FIG. 1A is a three-dimensional view of a nano-MOSFET with thirddimensional deep P+ contact and deep P implant according to a firstembodiment of the present invention.

FIG. 1B is a cross-sectional view of the nano-MOSFET of FIG. 1A alongline X-X′ of FIG. 1A.

FIG. 1C is a cross-sectional view of the nano-MOSFET of FIG. 1A alongline A-A′ of FIG. 1A

FIGS. 2A-2P are a sequence of cross-sectional schematic diagrams takenalong line B-B′ of FIG. 1A illustrating a method of fabrication thenano-MOSFET with third dimensional deep P+ contact of the type depictedin FIG. 1A.

FIG. 3A is a three-dimensional view of a nano-MOSFET with a thirddimensional deep P+ contact and thick bottom oxide (TBO) according to asecond embodiment of the present invention.

FIG. 3B is a cross-sectional view a nano-MOSFET with a third dimensionaldeep P+ contact and thick bottom oxide (TBO) according to a secondembodiment of the present invention.

FIGS. 4A-4N are a sequence of cross-sectional schematic diagramsillustrating a method of fabrication the Schottky-Source nano-MOSFETwith third dimensional deep P+ contact and deep P implant according to athird embodiment of the present invention.

FIG. 5 is a cross-sectional view of a Schottky-Source nano-MOSFET withthird dimensional deep P+ contact and thick bottom oxide (TBO) accordingto a fourth embodiment of the present invention.

FIG. 6 is a cross-sectional view of a termination area formed with thesame masks and process flow as the active area shown in FIGS. 2A-2P orFIGS. 4A-4N.

FIG. 7 is a three dimensional view of a nano-MOSFET with thirddimensional deep P+ contact, etched source region and thick bottom oxide(TBO) according to a fifth embodiment of the present invention.

FIGS. 8A-8J are a sequence of cross-sectional schematic diagramsillustrating a method of fabrication the nano-MOSFET with thirddimensional deep P+ contact, etched source region and thick bottom oxide(TBO) of the type depicted in FIG. 7.

FIG. 9 is a cross-sectional view of a SGT MOSFET with third dimensionaldeep P+ contact and etched source region according to a sixth embodimentof the present invention.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the figure(s) being described. Becausecomponents of embodiments of the present invention can be positioned ina number of different orientations, the directional terminology is usedfor purposes of illustration and is in no way limiting. It is to beunderstood that other embodiments may be utilized and structural orlogical changes may be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims.

Embodiments of the present invention resolve aforementioned problems byimplementation of a deep P implant at the bottom of the gate trench anda third dimensional deep P+ contact. The third dimensional deep P+contact facilitates sustaining high breakdown voltage while achievinglow gate drain capacitance C_(gd) or reversed transfer capacitanceC_(rss). The deep P+ region in third dimension forms a voltage clampdiode with lower avalanche breakdown than that of parasitic NPN BJT ofthe MOSFET cells. These deep P+ regions form “clamp diodes” repeatedwith a certain periodicity to prevent parasitic NPN BJT of the MOSFETgoing into avalanche BV thus avoid destruction of the device in the realworld applications. FIG. 1A is a three-dimensional view of a nano-MOSFETwith third dimensional deep P+ contact and deep P implant according to afirst embodiment of the present invention. The device 100 is generallyformed on a semiconductor substrate 104 of the first type dopant, forexample N-type, a lower portion 102 of which is heavily doped with thefirst type to act as a drain. A body region 114 doped of a second typeopposite to the first type, for example P-type, is formed near a surfaceof the substrate 104. A plurality of gate trenches 106 are formed inparallel in the substrate through the body region 104. For simplicityFIG. 1A only shows two gate trenches forming a semiconductor mesa therebetween. The trenches 106 are lined with an insulating material 110,e.g., an oxide, with a gate electrode 116 of a conductive materialformed inside each trench. A source region disposed in a top portion ofthe semiconductor mesa along the direction parallel to the length of thetrenches, includes a heavily doped regions 126 formed in the body region114 at or near the surface of the substrate and on top of a lightlydoped source region 124 along a sidewall of the gate trench to ensurethat the source region extends underneath the gate electrode, which isdescribed later, for proper MOSFET operation, and a top surface heavilydoped region 126′ extending between the sidewalls of the trenches thatis much shallower than the heavily doped regions 126. The lightly dopedsource region 124 laterally extends to a space away from the trench sidewall further than the heavily doped source region 126 disposed atop ofthe lightly doped source region 124. The source region is doped oppositethe body region 114, but the heavily doped source regions 126 and 126′are more heavily doped than the drain region. A body contact region 120is disposed and extending between the source regions 126 under the topsurface heavily doped region 126′ and forming junctions there between.By way of example, the body contact region 120 may be formed by P+implant that is more heavily doped than the body region 114. In oneembodiment, the body contact region 120 extends in a lateral spacegreater than a space between two adjacent lightly doped source regions124 disposed below a bottom of the body contact region 120 in thesemiconductor mesa. In one embodiment, the heavily doped source region126 extends from the top surface of the semiconductor mesa along theside wall of the gate trench down to a depth deeper than the bottom ofthe body contact region 120 and connects to the lightly doped sourceregion 124. The source region encapsulates the body contact region 120on the top surface of the mesa and along the side walls of the trenches.

For an N-type substrate, a deep P shield implant region 112 is formed atthe bottom of each gate trench 106 for shielding the gate electrode 116.The shield implant regions 112 extending to a width wider than the gatetrench surrounds the bottom of gate trench having a top edge spacedapart from the bottom of the body region 114. The gate electrode iselectrically insulated from the semiconductor substrate 104 by theinsulating material 110 in the trench 106. Another insulating materialelectrically isolates the gate electrode from the source metal (notshown). A top surface of the gate electrode 116 may be recessed belowthe level of an upper surface of the substrate 104. In any case, the topsurface of the gate electrode 116 should extend above a bottom of thelightly doped source region 124 and preferably above a bottom of theheavily doped source region 126.

A plurality of openings 130 extending from the top surface ofsemiconductor mesa penetrate through at least the source region 126′into the semiconductor mesa are disposed alongside with the gatetrenches. Preferably the plurality of openings 130 are disposedperiodically along the length of the semiconductor mesa and each openingextends across the entire width of the semiconductor mesa. The openingsdisposed on adjacent mesas are preferably interleaved with each other. Athird dimensional deep heavily doped contact 134 is disposed in each ofthe openings 130. Preferably the third dimensional deep heavily dopedcontacts 134 may extend the entire width of the semiconductor mesa downto a depth substantially the same as the bottom of the less heavilydoped body region 114, or slightly exceeding below the body region 114,to pin the device breakdown at these third dimensional deep heavilydoped contacts 134. For simplicity only one such opening 130 is shown inFIG. 1A. The opening 130 is further filled with a conductive material(not shown) to electrically connecting the third dimensional deepheavily doped contact 134 to the source region and a source metal (notshown) disposed on top of the device. The device 100 also includes adeep P implant region 132 below the third dimensional deep P+ contactformed at each opening 130 such that the deep P implant region 132extending below the body region 114 at least partially intersects thedeep P shield implant region 112 therefore electrically connecting thedeep P shield implant region 112 to the source through the thirddimensional deep heavily doped contact. In one preferred embodiment, thebottom of deep P implant region is shallower than the bottom of the gatetrenches.

FIG. 1B is a cross-sectional view of the device 100 along line X-X′ andFIG. 1C is a cross-sectional view of the device 100 along line A-A′. Theopening 130 is firstly formed in a third dimension in the mesa betweentwo gate trenches 106 extending across the entire width of the mesathrough the source region 126′ and body contact layer 120 to a depththat is shallower than the bottom of body region 114. In one embodimentthe depth of the opening 130 extends below the top surface of gateelectrode. A P type implantation at a high energy through the opening130 is carried out to form deep P implant region 132 followed by a lowenergy and heavy concentration P type implantation to form P+ contactregion 134 on top of the deep implant region 132, such that the P+contact region 134 is in contact with the deep P shield implant region112 at the bottom of the trenches 106 via the deep P implant region 132.In one preferred embodiment, the heavily doped P+ contact region 134extends from the bottom of opening 134 down to a depth into the epilayer 104 below the bottom of P body region 114. In another preferredembodiment, the heavily doped P+ contact region 134 has a bottomshallower than that of the gate trench bottom. In yet anotherembodiment, the deep P implant region 132 extends to a depth deeper thanthe bottom of gate trenches. In yet another embodiment, the deep Pimplant region 132 extends to a depth shallower than a bottom of thedeep P shield implant region 112. As shown in FIG. 1C, the shieldimplant regions 112 extending a width wider than the trench surroundsthe bottom of gate trench having a top edge on one side of the trenchspaced apart from the bottom of the body region 114 and another top edgeon the other side of the trench intersects with the deep P implantregion 132.

The device structure of the present invention includes one or more deepP+ contacts in the third dimension as shown in FIG. 1A enables the cellpitch to be reduced in half, e.g., to 0.4-μm pitch. Furthermore, thethird dimensional deep P+ contact can localize the breakdown andimproves the breakdown voltage capability of the device 100. The deep Pshield implant region 112 located at the bottom of the trench gate 106shields the gate electrode 116 inside the trench and also connects tosource potential via the P+ contact region 134 and the deep P implantregion 132, thus also acts as a source shield, as such C_(rss) isreduced. The doping dosage of the shield implant regions 112 can beconfigured to balance charge between the shield regions and nearbyportions of the substrate region 104.

FIGS. 2A-2O are cross-sectional diagrams illustrating a process ofmaking the nano-MOSFET device shown in FIG. 1A. As seen in FIG. 2A, theprocess may begin by forming an initial layer of insulator, e.g., oxide208, on the N-type semiconductor substrate 204, a lower portion 202 ofwhich is heavily doped with the N-dopant to act as a drain. A firstphotoresist (not shown), which is a trench mask, may be formed on theoxide 208 and then developed followed by patterning the oxide 208 toform the openings in the oxide 208. The trench mask is removed and gatetrenches 206, including gate contact trench 206-1, dummy gate trench206-2, active gate trenches 206-3 and 206-4 which are all interconnectedin a third dimension, may then be etched in the semiconductor substrate204 through the openings in the oxide 208. Additional active gatetrenches are usually formed to provide MOSFET cells in stripe layout. Asshown in FIG. 2B, liner insulator 209 (e.g., another oxide) may then beformed on exposed portions of the substrate 204 including side andbottom walls of the gate trenches 206. P type dopant, such as Boron, isimplanted at a high energy of about 30 keV to 200 keV to form shieldimplant regions 212 at the bottom of the trenches 206. The shieldimplant regions 212 extending a width wider than the gate trenchsurrounds the bottom of gate trench. The hard mask 208 blocks theimplantation into the top surface of the mesa during the implantationprocess.

As shown in FIG. 2C, the oxide layer 209 and the hard mask 208 are thenremoved followed by the growth of gate oxide 210 on exposed portions ofthe substrate 204 including side and bottom walls of the gate trenches206. For a low voltage device, the thickness of the gate oxide 210 is ina range of 50 Å to 500 Å. Conductive material, such as polysilicon withheavily doped N-type, is deposited inside the trenches 206 to form gateelectrode 216, which is then etched back to a predetermined depth belowthe top surface of the substrate 204. P-type dopant is angled implantedinto the top portions of the substrate 204 to form P-body region 214with polysilicon gate electrodes 216 inside the trenches 206 acting as areference for P-body implant. The P-type dopant is preferably implantedat a dose of 5e12 cm⁻² to 1e14 cm⁻² with an energy of 30 keV to 100 keV.A bottom of P body region 214 space away and above the shield implantregions 212.

The gate oxide 210 at the exposed sidewall of the trenches 206 isthinned to a few hundred Armstrong thick 218 as shown in FIG. 2D for thenext implantation step. P-type implantation, such as BF2 of a dose of5e13 cm⁻² to 5e15 cm⁻², is carried at a low energy of 10 keV to 20 keVat a zero angle to form a P+ body contact layer 220 at the top surfaceof the substrate 204 as shown in FIG. 2E. Alternatively, the P+ bodycontact layer 220 may be implanted before the thickness of the topportion of gate oxide 210 is reduced.

As shown in FIG. 2F, a second photoresist 222, which is a N+ sourcemask, is applied on top of the substrate 204 to block N/N+ implantationin the next step going into cells beneath gate and source metalisolation. As shown in FIG. 2F, the source mask covers at least a gatecontact trench 206-1, a dummy gate trench 206-2 with active gatetrenches 206-3 and 206-4 exposed. Ideally the source mask 222 may extendslightly over the edge of active gate trench 206-3 on the side near thedummy gate trench 206-2 thus partially covering the first active gatetrench 206-3 next to the dummy gate trench 206-2 such that no sourceimplant would go into the mesa between the first active gate trench206-3 and the dummy gate trench 206-2. Alternatively the edge of thesource mask 222 may recess from the active gate trench 206-3 to enablesource region formed along both side walls of the active gate trench206-3. No source region formed along the dummy gate trench or gatecontact trench.

N-type implantation is then carried out at an angle to form a lightlydoped source regions 224 followed by a heavy concentration N-typeimplantation at an angle to form self-aligned N+ source regions 226 ontop of the lightly doped source regions 224. The lightly doped sourceregions 224 extending deeper and broader than the self-aligned N+ sourceregions 226 ensures that the source region overlaps with the gateelectrode 216 thereby making the device structure more manufacturable.The N-type implantation may include an angled implantation of Phosphorusat a dose of 5e12 cm⁻² to 5e13 cm⁻² and at an energy of 20 keV to 40 keVforming N regions 224 followed by an angled implantation of Arsenic at adose of 5e15 cm⁻² and at an energy of 30 keV to 80 keV forming heavilydoped source regions 226 along the side wall of gate trench and heavilydoped source layer 226′ on top of P+ body contact layer 220. In thisimplantation step, the polysilicon 216 in the trenches 206 is also usedas a reference for better threshold voltage (V_(T)) control. Thus, thephotoresist is removed. Preferably the implantation angles are the samefor both lightly doped source regions 224 and the heavily doped sourceregions 206. The dopants of lightly doped source regions 224 areimplanted to penetrate deeper and further away from the gate trench sidewalls than the dopants of heavily doped source regions 226 thereforeforming wider and deeper regions 224 such that the spacing between twoadjacent lightly doped source regions 224 in a mesa is narrower than thespacing between two adjacent heavily doped source regions 226. Theheavily doped source layer 226′ is formed by counter doping the upperportion of the P+ body contact layer 220 and is shallower than the P+body contact layer 220.

As shown in FIG. 2G, a dielectric layer 227, e.g., an oxide, isdeposited to fill in the remaining portion of the trenches on top of thepolysilicon 216 and also on top of the substrate 204. The oxide 227 ontop of the substrate 204 is then planarized, for example by etching orCMP, leaving a thin dielectric layer, about 0.2 um to 0.8 um, on top ofthe mesa of the substrate. Alternatively, the oxide on top of thesubstrate is removed and a thin dielectric layer is then deposited ontop of the mesa of the substrate.

A third photoresist 231, which is a third dimensional P+ contact mask,is formed on the oxide 227 and then developed followed by patterning theoxide 227 to form the openings in the oxide 227 in the mesa between twoadjacent gate trenches 206 as shown in FIG. 2H. Preferably a pluralityof openings are layout periodically along the length of eachsemiconductor mesa between two adjacent active gate trenches and eachopening extends across the entire width of the semiconductor mesa atleast penetrate through the source layer 226′. The openings disposed onadjacent mesas are preferably inter-digitized with each other. Forsimplicity only one such opening is shown in FIG. 2H. The opening 230for a deep P+ contact at the third dimension is formed by etching thesubstrate through the opening in the oxide 227 to a depth below the toplevel of the polisilicon 216 in the trenches 206. FIG. 2I is across-sectional of the structure shown in FIG. 2H along a line A-A′.

P-type implantation is carried out through the opening 230 on the topportion of the remaining of the substrate, which includes theimplantation of Boron of a dose about 2e15 cm⁻² to 5e13 cm⁻² and at ahigh energy of about 100 keV to 600 keV to form the deep P implantregion 232 followed by the implantation of BF2 of a dose about 1e15 cm⁻²to 5e15 cm⁻² and at a low energy of about 10 keV to 40 keV to form deepP+ contact region 234 above the P implant region 232, where the Pimplant region 232 extending below the body region connects the P shieldimplant regions 212 to the P+ contact region 234 as shown in FIG. 2J. Inone embodiment, the P shield implant regions 212 extending a width widerthan the trench surrounds the bottom of gate trench having a top edge onone side of the trench spaced apart from the bottom of the body region214 and another top edge on the other side of the trench intersects withthe deep P implant region 232. In one preferred embodiment, the bottomof deep P shield implant region 232 is shallower than the bottom of thegate trenches. In another preferred embodiment, the third dimensionaldeep heavily doped contacts 234 may extend the entire width of thesemiconductor mesa down to a depth substantially the same as the bottomof the less heavily doped body region 214, or slightly exceeding belowthe body region 214, to pin the device breakdown at these thirddimensional deep heavily doped contacts 234.

Third photoresist 231 is thus removed and a metal 236, preferablyTungsten (W), is deposited on top of P+ contact region 234 to fill theopening 230 as shown in FIG. 2K. A fourth photoresist 238, which is anactive area contact mask, is formed on the oxide layer 227 on top of thesubstrate with openings on the active area followed by the etching ofthe oxide layer 227 through the openings to expose the active cells asshown in FIG. 2L. The photoresist 238 is then removed with the oxidelayer covering the mesas of dummy cell. A fifth photoresist 240, whichforms a gate contact mask, is applied on top of the substrate andpatterned with openings 242 over the gate contact trench 206-1 for theformation of gate contact for the gate electrode 216 inside the trenches206 in the termination area as shown in FIG. 2M. The photoresist 240 isthen removed. A barrier metal layer 244, which includes Ti/TiN, isdeposited on top of the substrate, then a metal layer 246, for exampleAl or Al:Si:Cu metal, is deposited on top of the barrier metal layer 244as shown in FIG. 2N.

As shown in FIG. 2O, a sixth photoresist 247, which is a metal mask, isapplied on top of metal 246 with an opening 248 for separation of gatemetal and source metal. The metal 246 thus is etched to remove a portionof the metal layer over the oxide layer covering the dummy cell area toseparate the source metal 252 from gate metal 250. By way of example,only one dummy gate trench is included under the gap between sourcemetal 252 and gate metal 250 as shown in FIG. 2P, however, additionaldummy gate trenches may be formed between gate contact trench 206-1 andactive gate trench 206-3 to provide multiple dummy cells under the gapbetween the source metal 252 and gate metal 250. The dummy cells arecovered by oxide to block metal connection to the mesas of dummy cells.Furthermore, for a requirement of forming the contact pads, passivationlayer may be deposited on top of the substrate and a seventhphotoresist, which is a passivation mask, may be applied to expose thepad areas.

The nano-MOSFET with third dimensional deep P+ contact of the typedepicted in FIG. 1A can also be applied for a nano-MOSFET with a thickbottom oxide (TBO). FIG. 3A is a three-dimensional schematic diagram ofa nano-MOSFET with third dimensional deep P+ contact with TBO 300according to a second embodiment of the present invention. The device300 is similar to the device 100 except that, a thick bottom oxide (TBO)312 is formed inside and at the bottom of each trench 106, under thegate electrode 116, for shielding the gate electrode 116 thereforeshielding implant under the gate trench is not needed.

As a result the deep P implant region 132 below the third dimensionaldeep P+ contact region 134 becomes optional as the connection to thedeep P implant region 112 is needed.

FIG. 3B is a cross-sectional schematic diagram of the device 300 aftersource and gate metal are formed. The structure of the device 300 inFIG. 3B is similar to the structure of the device shown in FIG. 2P,except that the deep P implant region 212 at the bottom of trench 206 isreplaced with the thick bottom oxide 312 for shielding the gateelectrode 216 inside the trench 216. As such, the process of making thedevice 300 is similar to the process shown in FIGS. 2A-2P with theimplant of P-type dopant through the trench bottom in FIG. 2B omitted.

A nano-MOSFET with a third dimensional deep P+ contact of the typedepicted in FIG. 1A and FIG. 3A can also be implemented for deviceshaving a shield gate trench (SGT) MOSFET configuration, in which ashield electrode is formed below the gate electrode inside the trench asthe gate structure shown in FIG. 9.

Nano MOSFET technology can be further ruggedized by replacing N+ sourceregion with Schottky Contact. FIGS. 4A-4N are cross-sectional schematicdiagrams illustrating a process of manufacturing a Schottky-Source NanoMOSFET with third dimensional deep P+ contact and deep P implant forshielding gate electrode according to a third embodiment of the presentinvention.

As seen in FIG. 4A, the process may begin by forming an initial layer ofinsulator, e.g., oxide 208, on the N-type semiconductor substrate 204, alower portion 202 of which is heavily doped with the N-dopant to act asa drain. A first photoresist (not shown), which is a trench mask, may beformed on the oxide 208 and then developed followed by patterning theoxide 208 to form the openings in the oxide 208. The trench mask isremoved and gate trenches 206, including contact gate trench 206-1,dummy gate trench 206-2, active gate trenches 206-3 and 206-4 as shown,may then be etched in the semiconductor substrate 204 through theopenings in the oxide 208. Additional active gate trenches are usuallyformed to provide MOSFET cells in stripe layout. As shown in FIG. 4B,liner insulator 209 (e.g., another oxide) may then be formed on exposedportions of the substrate 204 including side and bottom walls of thegate trenches 206. P type dopant, such as Boron, is implanted at a highenergy of about 30 keV to 200 keV to form shield regions 212 at thebottom of the trenches 206. The shield implant regions 212 extending toa width wider than the gate trench surrounds the bottom of gate trench.

As shown in FIG. 4C, the oxide layer 209 is then removed followed by thegrowth of gate oxide 210 on exposed portions of the substrate 204including side and bottom walls of the gate trenches 206. For a lowvoltage device, the thickness of the gate oxide 210 is in a range of 50Å to 500 Å. Conductive material, such as polysilicon with heavily dopedN-type, is deposited inside the trenches 206 to form gate electrode 216,which is then etched back to a predetermined depth below the top surfaceof the substrate 204. A dielectric material 402, such as SiO2 or Si3N4,is deposited to fill the remaining portion of the trenches 206, thus thedielectric material is removed from the surface of the mesa region onthe substrate by etching or CMP as shown in FIG. 4D.

The silicon at the mesa region, between two adjacent trenches 206, isetched back to a predetermined depth lower than the top surface of thepolysilicon gate 216 in the trench 206 as shown in FIG. 4E. A thin oxidelayer 404, about 100 A° to 300 A°, is grown on top of the etched siliconsubstrate followed by a P-type implantation to form the P-body layer 414as shown in FIG. 4F. A bottom of P body region 414 space away and abovethe shield implant regions 212. A second photoresist 410, which is athird dimensional P+ contact mask, is formed on the oxide 404 with theopenings 411 located at the mesa between two adjacent gate trenches 206as shown in FIG. 4G. Preferably a plurality of openings 411 may belayout periodically along the length of each semiconductor mesa betweentwo adjacent gate trenches, including the dummy gate trenches and thegate contact trench, and each opening extends across the entire width ofthe semiconductor mesa. The openings disposed on adjacent mesas arepreferably interleaved with each other. For simplicity only one suchopening is shown in FIG. 4G between the dummy gate trench and the gatecontact trench. P-type implantation is carried out through the opening411 on the top portion of the remaining of the substrate, which includesthe implantation of Boron to form the deep P implant region 406 followedby the implantation of Boron or BF₂ of a dose about 5e14 cm⁻² to 5e15cm⁻² to form deep P+ contact region 408 above the P implant region 406,where the P implant region 406 extending below the body region connectsthe P shield regions 212 to the P+ contact region 408 as shown in FIG.4G. In one embodiment, the shield implant regions 212 extending a widthwider than the gate trench surrounds the bottom of gate trench having atop edge on one side of the trench spacing apart from the bottom of thebody region 414 and another top edge on the other side of the trenchintersecting with the deep P implant region 406. In another embodimentthe third dimensional deep heavily doped contacts 408 may extend theentire width of the semiconductor mesa down to a depth substantially thesame as the bottom of the less heavily doped body region 414, orslightly exceeding below the body region 414, to pin the devicebreakdown at these third dimensional deep heavily doped contacts 408. Inanother preferred embodiment, the bottom of deep P implant region 406 isshallower than the bottom of the gate trenches. The photoresist 410 isthus removed and blanket implantation of N-type dopant, for examplephosphorus or Arsenic, is carried out at the top portion of the P-bodylayer 414 for forming a lightly doped P layer 420 in the area other thanthe deep P+ contact regions 408, as shown in FIG. 4H, for formingSchottky contact at later steps. The blanket implantation of N-typedopant does not affect the P+ contact regions 408 due to its relativelylow dosage.

Thin oxide 404 is then removed followed by the deposition of Schottkymetal as shown in FIG. 4I, which includes the deposition of a Schottkymetal layer 422, preferably Ti-Silicide, forming Schottky contactbetween the lightly doped P-layer 420 and the Schottky metal layer 422after temperature treatment with Schottky formed selectively on the mesasurface and the un-reacted metal is then removed. The Schottky metallayer 422 covers the entire flat mesa surface patterned with lightlydoped P− regions 420 interspersed with P+ contacts 408 thus Schottkycontacts are formed between the Schottky metal layer 422 and the lightlydoped P− regions 420 interspersed with ohmic contacts formed between theSchottky metal layer 422 the P+ contacts 408. Then, a metal 424, such asTungsten (W), is deposited on top of the Schottky metal layer 422 overthe entire mesa and planarized to the surface of the oxide 402 fillingthe top of the trenches 206.

A dielectric layer 426, for example SiO₂, is deposited on top of thestructure followed by forming a third photoresist 430, which is acontact and gate mask for the active area of the device, on thedielectric layer 426 as shown in FIG. 4J. The photoresist 430 includesopenings 434 and 432 for the source and gate contacts. Thus thedielectric layer 426 and the oxide 402 are etched through the openings434 and 432 to expose the Tungsten 424 in the silicon mesa and thepolysilicon gate 216 inside the trench 206 as shown in FIG. 4K. Thethird photoresist 430 is then removed followed by the deposition of thebarrier metal layer 427 and metal 428 as shown in FIG. 4L.

As shown in FIG. 4M, a fourth photoresist 440, which is a metal mask, isapplied on top of metal 428 with an opening 442 to remove a portion ofthe metal layer over the oxide layer covering the dummy cell area forseparation of gate metal and source metal. The metal 428 thus is etchedto separate the source metal 444 from gate metal 446 as shown in FIG.4N. By way of example, only one dummy gate trench is included under thegap between source metal 444 and gate metal 446 as shown in FIG. 4N,however, additional dummy gate trenches may be formed between gatecontact trench 206-1 and active gate trench 206-3 to provide multipledummy cells under the gap between the source metal 444 and gate metal446. The dummy cells are covered by oxide to block source metalconnection to the mesas of dummy cells. As shown in FIG. 4N, the deep P+contact regions 408 formed in dummy cell mesas are covered by oxidelayer 426. However the deep P+ contact regions 408 formed in active cellmesas in the third dimension are in electrical connection to the sourcemetal through conductive layers 422 and 424 (not shown). Furthermore,for a requirement of forming the contact pads, passivation layer isdeposited on top of the substrate and a fifth photoresist, which is apassivation mask, is applied to expose the pad areas.

In this Schottky-Source Nano MOSFET device, Schottky contact allowslower P-body dose, and the P-shield prevent P-body punch through, whichenables to achieve low threshold voltage (V_(T)) for portableapplications. In addition, lightly doped P-body will yield lowerbase-emitter voltage (V_(BE)) in synchronous mode that causes lowerdiode recovery losses.

The Schottky-Source Nano MOSFET configuration shown in FIG. 4N can beapplied for Nano MOSFET with a thick bottom oxide (TBO). FIG. 5 is across-sectional schematic diagram illustrating a Schottky-Source NanoMOSFET device with third dimensional deep P+ contact and thick bottomoxide 512 according to a fourth embodiment of the present invention. Thedevice structure shown in FIG. 5 is similar to the structure shown inFIG. 4N except that the deep P implant regions 212 is replaced withthick bottom oxide 512 for shielding the gate electrode 216. As such,the process of making this device is similar to the process shown inFIGS. 4A-4N with the step of P-type dopant through the trench 206 inFIG. 4B being skipped.

In addition, the Schottky-Source Nano MOSFET configuration shown in FIG.4N can also be implemented for devices having the Nano SGT MOSFETconfiguration with a gate structure similar to that in FIG. 9.

FIG. 6 is a cross-section view illustrating a termination area of theNano MOSFET device of the type depicted in FIG. 2P, which is formed withthe same masks and process as the active area as shown in FIGS. 2A-2O.As shown in FIG. 6, the termination area includes a plurality oftermination gate trenches 206″ formed at the same time as the gatetrenches 206 in the substrate 204 through the body region 214″ and linedwith an insulating material 210, e.g., an oxide, with an isolated gateelectrode 216″ of a conductive material formed inside each trench.Unlike the active gate trenches that are interconnected, thesetermination gate trenches 206″ are separated from each other withoutinterconnection. Body contact P+ implant regions 220″ are formed at thetop portion of the body region 214″ and deep P implant region 212″formed at the bottom of each trench 206″. Each isolated trench gate 216″provides a trench lateral MOSFET with P+ regions 220″ functioning as thesource and drain of the lateral MOSFET. In the termination area, thegate electrode 216″ is connected to its corresponding source electrode.By connecting the gate electrode to the source electrode, the gateelectrodes 216″ act as a chain in the termination area in a cascadefashion. The last isolated trench gate next to the saw street of theedge of semiconductor substrate is connected to its corresponding drainelectrode to provide a channel stop. Shield implant regions 212″ may beprovided at the same time as shield implant regions 212 are formed.However no deep P+ third dimensional contacts 234 or deep P implantregions 232 are provided in termination region therefore the shieldimplant regions 212″ are floating. The termination configuration shownin FIG. 6 can also implemented for Nano MOSFET devices of the typesdepicted in FIGS. 3A, 4N, 5 and also for the Nano SGT MOSFET devices tobe described in the rest of this application with or without thefloating shield implant regions 212″.

FIG. 7 is a three-dimensional view of a nano-MOSFET device 700 withthird dimensional deep P+ contact, N+ source region and thick bottomoxide according to a fifth embodiment of the present invention. Similarto the device 100 or 300, the device 700 is formed on a semiconductorsubstrate 204 of the first type dopant, for example N-type, a lowerportion 202 of which is heavily doped with the first type to act as adrain. A body region 714 doped of a second type opposite to the firsttype, for example P-type, is formed near a surface of the substrate 204.A source region 720 is formed in the body region 714 at or near thesurface of the substrate. The source region 720 is doped opposite thebody region 714, but more heavily than the drain region.

Gate trenches 206 are formed in the substrate through the body region.The trenches 206 are lined with an insulating material 710, e.g., anoxide, with a gate electrode 716 of a conductive material formed insideeach trench. Thick bottom oxide 712 is formed inside and at the bottomof each trench 206 underneath the gate electrode 716 for shielding thegate electrode 716. The device 700 also includes a third dimensionaldeep P+ contact including a P+ contact region 234 above a P implantregion 232 formed in a third dimension through the opening 230 in themesa between two gate trenches 206. In this embodiment, an elongatedopening 730 is formed across a center portion of the source region inthe mesa between two active gate trenches along the third dimension. Theelongated opening 730 also runs across the opening 230. In oneembodiment the elongated opening 730 penetrates through a depth of thesource region 720 exposing a top portion of the body 714 in the centerof the mesa. In another embodiment the opening 230 is etched into thebody region 714 deeper than the elongated opening 730. A metal (notshown in FIG. 7) filling the elongated opening 730 and the opening 230provides an active cell contact and electrical contact with the deep P+contacts. For high density compact cell devices with pitch less than 1um, such as the nano-MOSFET disclosed in this invention, P+ contactimplant at the bottom of the elongated opening 730 is avoided to preventinterference to the gate threshold. Alternatively the thick bottom oxidegate trench may be replaced with a uniform gate oxide trench with ashield implant region surrounding the bottom of gate trench as thatshown in FIG. 1A with a deep implant electrically connecting the shieldimplant region to the source electrode through the third dimensionalcontact.

FIGS. 8A-8K are cross-sectional diagrams illustrating a process ofmaking the nano-MOSFET device shown in FIG. 7. As seen in FIG. 8A, theprocess may begin by forming an initial layer of insulator, e.g., oxide208, on the N-type semiconductor substrate 204, a lower portion 202 ofwhich is heavily doped with the N-dopant to act as a drain. A firstphotoresist (not shown), which is a trench mask, may be formed on theoxide 208 and then developed followed by patterning the oxide 208 toform the openings in the oxide 208. The trench mask is removed and gatetrenches 206, including gate contact trench 206-1, dummy gate trench206-2, active gate trenches 206-3 and 206-4 which are all interconnectedin a third dimension, may then be etched in the semiconductor substrate204 through the openings in the oxide 208. As shown in FIG. 8B, theoxide 208 is removed followed by forming a thin oxide 708 on the surfaceof the substrate 204, which includes openings on the trenches 206. Athick bottom oxide 712 is formed at the bottom of the trenches and athin gate oxide 710, which is about 50 A° to 500 A° for a low voltagedevice, is then grown on the sidewall of the trenches. Conductivematerial 716, such as polysilicon with heavily doped N-type, is thusdeposited to fill the trench 206. Polysilicon 716 and thin oxide 708 areetched back to the top surface of the substrate 204, thus oxide 708 isgrown back. As shown in FIG. 8C, P-type implantation, with a dose of5e12 cm⁻² to 1e14 cm⁻² and at an energy of 30 keV to 100 keV, is carriedout on the top portion of the substrate 204 in the mesa between twoadjacent trenches 206 followed by a drive process to form P-body region714. Then, an N-type implantation at a high does and low energy iscarried out to form N+ source region 718 that extends across the widthof a space between adjacent trenches 206.

A second photoresist 720, which is a P+ contact mask, is formed on topof the substrate and then developed to form the openings 722 and 724 inthe selective mesa between two adjacent gate trenches 206 as shown inFIG. 8D. The thin oxide 708 and the N+ source region 718 are etchedthrough the openings 722, 724. Preferably, the N+ source region 718 isetched off 0.1 μm to 0.2 μm depth. In one embodiment the width ofopenings 722 and 724 are narrower than the width of mesas leavingresidual N+ regions along the side walls of the gate trenches. Inanother embodiment the width of openings 722 and 724 are across theentire width of mesas. Deep P-type implantation, preferably BF2 orBoron, with high does and high energy is carried out to form an optionaldeep P-implant region 728 and a P+ contact region 726 atop the optionalP-implant region 728 as shown in FIG. 8E. Alternatively the photoresist720 may also includes a plurality of openings 230 as shown in FIG. 7layout periodically along the length of each semiconductor mesa betweentwo adjacent gate trenches, including the dummy gate trenches and thegate contact trench, and each opening extends across the entire width ofthe semiconductor mesa. Sections of source region 718 under openings 230are etched through at least down to the body region 714 followed withthe deep P+ contact implant 234 and the optional deep P region implant232. The openings disposed on adjacent mesas are preferably interleavedwith each other. For simplicity only one such opening is shown in FIG. 7between two active gate trenches. As shown in FIG. 8F, a photoresist 720is removed. A dielectric layer 729, e.g. an oxide, is deposited to fillthe etched N+ source region and thus is planarized, including theopenings 230 which are not shown here. A third photoresist 730, which isa contact mask, is applied on top of the substrate and then developed toform the opening 732 for forming the active cell contact, opening 734for deep P+ contact and opening 736 for forming a gate contact. Theoxide 729 is etched followed by the etching of N+ source region throughthe opening 732, the etching of P+ region 726 through the opening 734and the etching of polysilicon 716 through the opening 736 to a depth ofabout 0.1 μm to 0.2 μm as shown in FIG. 8G. As shown in FIG. 7, theactive cell contact opening is opened along the length and in the middleof the mesa down to a depth at least through the source layer 720 toexpose a central top portion of the body region. The openings 230 filledwith dielectric 729 in step shown in FIG. 8F are now reopened (notshown).

As shown in FIG. 8H, the photoresist 730′ is removed. Thin barrier layer738 of Ti/TiN is formed on top of the substrate followed by thedeposition of a metal 739, such as Aluminum, over the whole substrate.The opening 734 may be narrower than the opening 722 such thatconductive layers 738 and 739 filing the opening 734 would be separatedby the residue of dielectric material filling the opening 722, from thesource region on the mesa between the dummy gate trench 206-2 and theactive gate trenches 206-3. A fourth photoresist 740, which is a metalmask, is applied on top of metal 739 with an opening 742 for separationof gate metal and source metal as shown in FIG. 8I. The metal 739 thusis etched to separate the source metal 744 from gate metal 746 as shownin FIG. 8J. Furthermore, for a requirement of forming the contact pads,passivation layer is deposited on top of the substrate and a fifthphotoresist, which is a passivation mask, is applied to expose the padareas.

The nano-MOSFET with third dimensional P+ contact configuration shown inFIG. 7 and FIG. 8J is also applied for a shield gate trench (SGT)nano-MOSFET. FIG. 9 is a cross-sectional schematic diagram illustratinga SGT nano-MOSFET device with third dimensional deep P+ contact, N+source region and thick bottom oxide. The structure of the SGTnano-MOSFET device 900 is similar to the structure of the nano-MOSFETdevice of FIG. 8J except that a gate electrode 902 and a shieldelectrode 904 are formed inside the trench 206 instead of just a gateelectrode 716. Furthermore, the thick bottom oxide 712 of thenano-MOSFET device shown in FIG. 7 or FIG. 8J can be replaced with Pshield regions, for example P shield regions 212 of FIG. 2P, at thebottom of the trenches 206, in this case the implant of deep P-implantregion 728 is mandatory for the electrical connection of the P shieldregions 212 to the source metal.

The description above uses N-channel MOSFET as embodiments and isapplicable to P-channel MOSFET by reversing the conductivity types ofeach doping region. While the above is a complete description of thepreferred embodiments of the present invention, it is possible to usevarious alternatives, modifications, and equivalents. Therefore, thescope of the present invention should be determined not with referenceto the above description but should, instead, be determined withreference to the appended claims, along with their full scope ofequivalents. Any feature, whether preferred or not, may be combined withany other feature, whether preferred or not. In the claims that follow,the indefinite article “A” or “An” refers to a quantity of one or moreof the item following the article, except where expressly statedotherwise. The appended claims are not to be interpreted as includingmeans-plus-function limitations, unless such a limitation is explicitlyrecited in a given claim using the phrase “means for”. Any element in aclaim that does not explicitly state “means for” performing a specifiedfunction, is not to be interpreted as a “means” or “step” clause asspecified in 35 USC §112, ¶6.

What is claimed is:
 1. A semiconductor power device, comprising: alightly doped layer of a first conductivity type formed on top of aheavily doped layer of the first conductivity type, one or more devicesformed in the lightly doped layer, each device including a doped bodyregion of a second conductivity type that is opposite the firstconductivity type, one or more electrically insulated gate electrodesformed in one or more corresponding trenches in the lightly doped layer,and a source region, wherein each of the one or more trenches has adepth that extends in a first dimension, a width that extends in asecond dimension and a length that extends in a third dimension, whereinthe first dimension is perpendicular to a plane of the heavily dopedlayer and wherein the second and third dimensions are parallel to theplane of the heavily doped layer; wherein the doped body region isformed adjacent to one or more of the trenches proximate an uppersurface of the lightly doped layer; wherein the source region is formedproximate the upper surface and adjacent to one or more of the trenchesextending along the third dimension; and one or more deep heavily dopedcontacts of the second conductivity type formed at one or more locationsproximate one or more of the trenches along the third dimension, whereinthe one or more deep heavily doped contacts extend in the firstdirection from a surface below a top surface of the gate electrodes intoa portion of the lightly doped layer substantially a same depth as abottom of the doped body region, wherein the one or more deep heavilydoped contacts are in electrical contact with the source region.
 2. Thedevice of claim 1, wherein the one or more deep heavily doped contactsextend in the first direction into a portion of the lightly doped layerabove a bottom of the one or more trenches.
 3. The device of claim 1,wherein the source region comprises a first heavily doped region of thefirst conductivity type formed proximate the upper surface extendingfrom a side wall of a first trench of the one or more trenches to a sidewall of a second trench of the one or more trenches adjacent the firsttrench and a second heavily doped region of the first conductivity typeadjacent to the side wall of the first trench.
 4. The device of claim 3,wherein the source region further comprises a lightly dope region of thefirst conductivity type disposed below and intersecting with the secondheavily doped region of the first conductivity type adjacent to the sidewall of the first trench extending along the first dimension.
 5. Thedevice of claim 3 further comprises a heavily doped region of the secondconductivity type disposed below and intersecting with the first heavilydoped region of the first conductivity type.
 6. The device of claim 1,wherein the source region comprises a heavily doped region of the firstconductivity type formed proximate the upper surface extending from aside wall of a first trench of the one or more trenches to a side wallof a second trench of the one or more trenches adjacent the firsttrench, an elongated opening along the third dimension formed through acentral portion of the source region exposed a portion of the doped bodyregion in the opening.
 7. The device of claim 6 further comprising oneor more dummy gate trenches adjacent to one of the one or more trenches,a source metal electrically connecting a heavily doped region of thesecond conductivity type disposed under a heavily dope region of thefirst conductivity type proximate the upper surface on a mesa formedbetween the dummy gate trench and the one of the one or more trenchesthrough an opening between the dummy gate trench and the one of the oneor more trenches, a side wall of the elongated opening between the dummygate trench and the one of the one or more trenches being surrounded bya dielectric layer electrically isolating the heavily dope region of thefirst conductivity type between the dummy gate trench and the one of theone or more trenches from the source metal.
 8. The device of claim 7further comprising a gate contact trench adjacent to one of the one ormore dummy gate trenches, a heavily doped region of the secondconductivity type disposed under a heavily dope region of the firstconductivity type proximate the upper surface on a mesa formed betweenthe one of the one or more dummy gate trenches and the gate contacttrench.
 9. The device of claim 1, further comprising one or more dopedimplant shield regions formed in the lightly doped layer adjacent abottom portion of one or more of the trenches extending along the thirddimension, wherein the one or more doped implant shield regions are ofthe second conductivity type, wherein one or more of the deep heavilydoped contacts electrically connect one or more of the doped implantshield regions.
 10. The device of claim 9, wherein the one or more deepheavily doped contacts include one or more deep heavily doped contactregions formed on top of one or more deep implant regions of the secondconductivity type, wherein the one or more deep implant regionsintersect the doped implant shield region.
 11. The device of claim 9,further comprising a gate contact trench and a doped implant shieldregion of second conductivity type formed in the lightly doped layeradjacent a bottom portion of the gate contact trench extending along thethird dimension.
 12. The device of claim 9, further comprising atermination area having one or more isolated gate disposed in one ormore corresponding trenches isolated from each other and doped implantshield regions formed in the lightly doped layer adjacent a bottomportion of one or more of the isolated trenches extending along thethird dimension.
 13. The device of claim 1, wherein one or more openingsthrough the source region atop the one or more deep heavily dopedcontacts extending in the second dimension from a side wall of one ofthe one or more trenches to a side wall of an adjacent trench, saidopenings being filled with a conductive material.
 14. The device ofclaim 1, wherein a thick bottom insulator is formed in a bottom portionof one or more of the trenches between the gate electrode and thelightly doped layer.
 15. The device of claim 1, further comprising oneor more shield electrodes formed in one or more of the one or moretrenches proximate a corresponding one or more of the one or more gateelectrodes, wherein the one or more shield electrodes are electricallycoupled to the source region.
 16. The device of claim 1 furthercomprising a termination area having a plurality of isolated gateelectrodes disposed in a corresponding plurality of termination trenchesisolated from each other, in which each of the isolated gate electrodeis connected to a source adjacent to the corresponding terminationtrench.
 17. The device of claim 1, wherein the top surface of the gateelectrode extends above the upper surface of the lightly doped layer,the source region comprising a Schottky metal layer disposed atop of alightly doped layer of the second conductivity type proximate the uppersurface of the lightly doped layer constituting a Schottky source. 18.The device of claim 17, further comprising a conductive material fillinga space above the Schottky metal layer between adjacent trenches. 19.The device of claim 17, further comprising a dummy trench and a contactgate trench adjacent to the dummy gate trench, a deep heavily dopedcontact disposed between the contact gate trench and the dummy gatetrench extends in the first direction from the upper surface of thelightly doped layer into the lightly doped layer below the body region.20. A semiconductor power device, comprising: a lightly doped layer of afirst conductivity type formed on top of a heavily doped layer of thefirst conductivity type, one or more devices formed in the lightly dopedlayer, each device including a doped body region, one or moreelectrically insulated gate electrodes formed in one or morecorresponding trenches in the lightly doped layer, a source region,wherein each of the one or more trenches has a depth that extends in afirst dimension, a width that extends in a second dimension and a lengththat extends in a third dimension, wherein the first dimension isperpendicular to a plane of the heavily doped layer and wherein thesecond and third dimensions are parallel to the plane of the heavilydoped layer; wherein the doped body region is formed adjacent to one ormore of the trenches proximate an upper surface of the lightly dopedlayer, wherein the body region is of a second conductivity type that isopposite the first conductivity type; wherein the one or more trenchescomprises a first trench and a second trench adjacent to the firsttrench, wherein the source region comprises a first heavily doped of thefirst conductivity type formed proximate the upper surface extendingfrom a side wall of the first trench to a side wall of the second trenchadjacent the first trench and a second heavily doped region of the firstconductivity type adjacent to the side wall of the first trenchextending along the third dimension; one or more deep heavily dopedcontacts of the second conductivity type formed at one or more locationsproximate one or more of the trenches along the third dimension, whereinthe one or more deep heavily doped contacts extend in the firstdirection from a surface below a top surface of the gate electrode intoa portion of the lightly doped layer.
 21. The device of claim 20,wherein the source region further comprises a lightly dope region of thefirst conductivity type disposed below and intersecting with the secondheavily doped region of the first conductivity type adjacent to the sidewall of the first trench extending along the first dimension. (FIGS. 1A,2P, 3A)
 22. The device of claim 20 further comprising a heavily dopedregion of the second conductivity type disposed below and intersectingwith the first heavily doped region of the first conductivity type.(FIGS. 1A, 2P, 3A)
 23. A method for manufacturing a semiconductor powerdevice, comprising: forming one or more trenches in a lightly dopedlayer of a first conductivity type on top of a heavily doped layer ofthe first conductivity type; forming one or more electrically insulatedgate electrodes in the one or more trenches, wherein each of the one ormore trenches has a depth that extends in a first dimension, a widththat extends in a second dimension and a length that extends in a thirddimension, wherein the first dimension is perpendicular to a plane ofthe heavily doped layer and wherein the second and third dimensions areparallel to the plane of the heavily doped layer; forming a doped bodyregion adjacent to one or more of the trenches proximate an uppersurface of the lightly doped layer, wherein the body region is of asecond conductivity type that is opposite to the first conductivitytype; forming a source region proximate the upper surface and adjacentto one or more of the one or more trenches, wherein the source regionincludes a first heavily doped source region of the first conductivitytype formed proximate the upper surface extending from a side wall of afirst of the one or more trenches to a side wall of a second of the oneor more trenches adjacent the first trench and a second heavily dopedsource region of the first conductivity type adjacent to the side wallof the first trench extending along the third dimension; and forming oneor more deep heavily doped contacts at one or more locations proximateone or more of the trenches along the third dimension, wherein the oneor more deep heavily doped contacts extend in the first direction intothe lightly doped layer, wherein the one or more deep heavily dopedcontacts are in electrical contact with the source region.
 24. Themethod of claim 23, further comprising forming one or more doped implantshield regions in the lightly doped layer adjacent a bottom portion ofone or more of the trenches extending along the third dimension, whereinthe one or more doped implant shield regions are of the secondconductivity type.
 25. The method of claim 24, wherein forming the oneor more deep heavily doped contacts further includes forming one or moredeep implant regions of the second conductivity type deeper than the oneor more deep heavily doped contacts, wherein the one or more deepimplant regions intersect the doped implant shield region.
 26. Themethod of claim 25, wherein forming the one or more deep heavily dopedcontacts includes etching through at least the first heavily dopedsource region to form one or more openings, implanting a dopant of thesecond conductivity type through a bottom of the openings thus formingone or more heavily doped contact regions on top of the one or more deepimplant regions.
 27. The method of claim 23, further comprising formingetching through at least the first heavily doped source region to formone or more openings, implanting a dopant of the second conductivitytype through a bottom of the openings thus forming one or more heavilydoped contact regions, filling the openings with a conductive materialto form an electrical contact between at least one of the one or moredeep heavily doped contacts and a source metal that is in electricalcontact with the source region.
 28. The method of claim 23, furthercomprises forming a heavily doped region of the second conductivity typeunder the first heavily doped source region to a depth shallower thanthe second heavily doped source region.
 29. The method of claim 23,further comprising forming a thick bottom insulator in a bottom portionof one or more of the trenches between the gate electrode and thelightly doped layer.
 30. The method of claim 23, wherein forming thesource region includes forming a lightly doped region of the firstconductivity type under the second heavily doped region of the firstconductivity type adjacent to the side wall of the first trenchextending along the third dimension.
 31. The method of claim 23, furthercomprising forming one or more shield electrodes in one or more of theone or more trenches proximate a corresponding one or more of the one ormore gate electrodes and electrically coupling the one or more shieldelectrodes to the source region.
 32. A method for manufacturing asemiconductor power device, comprising: forming one or more trenches ina lightly doped layer of a first conductivity type on top of a heavilydoped layer of the first conductivity type; forming one or moreelectrically insulated gate electrodes in the one or more trenches,wherein each of the one or more trenches has a depth that extends in afirst dimension, a width that extends in a second dimension and a lengththat extends in a third dimension, wherein the first dimension isperpendicular to a plane of the heavily doped layer and wherein thesecond and third dimensions are parallel to the plane of the heavilydoped layer; forming a doped body region adjacent to one or more of thetrenches proximate an upper surface of the lightly doped layer, whereinthe body region is of a second conductivity type that is opposite to thefirst conductivity type; forming a source region proximate the uppersurface and adjacent to one or more of the trenches, wherein the sourceregion is heavily doped of the first conductivity type; forming one ormore deep heavily doped contacts at one or more locations proximate oneor more of the trenches along the third dimension, wherein the one ormore deep heavily doped contacts extend in the first direction from theupper surface into the lightly doped layer, wherein the one or more deepheavily doped contacts are in electrical contact with the source region;forming an elongated opening in the source region in a mesa adjacent oneor more of the one or more trenches, wherein a portion of the doped bodyregion in the opening is exposed from the source region; and forming anactive cell contact in the elongated opening in the mesa wherein theactive cell contact is in electrical contact with one or more of the oneor more deep heavily doped contacts.
 33. The method of claim 32, furthercomprising forming one or more doped implant shield regions in thelightly doped layer adjacent a bottom portion of one or more of thetrenches extending along the third dimension, wherein the one or moredoped implant shield regions are of the second conductivity type. 34.The method of claim 33, wherein forming the one or more deep heavilydoped contacts includes forming one or more deep implant regions of thesecond conductivity type deeper than the one or more deep heavily dopedcontacts, wherein the one or more deep implant regions intersect thedoped implant shield region.
 35. The method of claim 34, wherein formingthe one or more deep heavily doped contacts further includes etchingthrough at least the source region to form one or more openings,implanting a dopant of the second conductivity type through a bottom ofthe openings forming one or more heavily doped contact regions on top ofthe one or more deep implant regions, wherein the one or more heavilydoped contact regions are of the second conductivity.
 36. The method ofclaim 32, further comprising etching through at least the source regionto form one or more openings, implanting a dopant of the secondconductivity type through a bottom of the openings thus forming one ormore heavily doped contact regions, filling the openings with adielectric material.
 37. The method of claim 36, wherein forming theelongated opening in the source region further comprising etchingthrough the source region an elongated opening running across and havinga width narrower than the one or more openings filled with dielectricmaterial
 38. The method of claim 32, further comprising forming a thickbottom insulator in a bottom portion of one or more of the trenchesbetween the gate electrode and the lightly doped layer.
 39. The methodof claim 32, further comprising forming one or more shield electrodes inone or more of the one or more trenches proximate a corresponding one ormore of the one or more gate electrodes and electrically coupling theone or more shield electrodes to the source region.
 40. A method formanufacturing a semiconductor power device, comprising: forming one ormore trenches in a lightly doped layer of a first conductivity type ontop of a heavily doped layer of the first conductivity type; forming oneor more electrically insulated gate electrodes in the one or moretrenches with a top surface of the gate electrode etched back to a levelbelow the upper surface of the lightly doped layer, wherein each of theone or more trenches has a depth that extends in a first dimension, awidth that extends in a second dimension and a length that extends in athird dimension, wherein the first dimension is perpendicular to a planeof the heavily doped layer and wherein the second and third dimensionsare parallel to the plane of the heavily doped layer; etching back thelightly doped layer to a level below the top surface of the gateelectrode; forming a doped body region adjacent to one or more of thetrenches proximate an upper surface of the etched lightly doped layer,wherein the body region is of a second conductivity type opposite to thefirst conductivity type; forming one or more deep heavily doped contactsat one or more locations proximate one or more of the trenches along thethird dimension, wherein the one or more deep heavily doped contactsextend in the first direction from the upper surface into the lightlydoped layer; and forming a Schottky contact in a mesa adjacent one ormore of the one or more trenches, wherein the one or more deep heavilydoped contacts are in electrical contact with the Schottky contact. 41.The method of claim 40, further comprising forming one or more dopedimplant shield regions in the lightly doped layer adjacent a bottomportion of one or more of the trenches extending along the thirddimension, wherein the one or more doped implant shield regions are ofthe second conductivity type.
 42. The method of claim 41, whereinforming the one or more deep heavily doped contacts includes forming oneor more deep implant regions of the second conductivity type deeper thanthe heavily doped contacts, wherein the one or more deep implant regionsintersect the doped implant shield region.
 43. The method of claim 40,wherein forming the one or more deep heavily doped contacts includesforming the one or more deep heavily doped contacts between two adjacenttrenches of the one or more trenches.
 44. The method of claim 43,further comprises depositing a conductive material filling a space abovethe Schottky contact between the two adjacent trenches.
 45. The methodof claim 40, further comprising forming a thick bottom insulator in abottom portion of one or more of the trenches between the gate electrodeand the lightly doped layer.
 46. The method of claim 40, wherein formingthe Schottky contact includes forming a Schottky lightly doped region ontop of the body region and forming a Schottky metal layer on top of theSchottky lightly doped region, wherein the Schottky lightly doped regionis sandwiched between the Schottky metal layer and the body region andwherein the Schottky lightly doped region is of the second conductivitytype but is less heavily doped than the body region.
 47. The method ofclaim 40, further comprising forming one or more shield electrodes inone or more of the one or more trenches proximate a corresponding one ormore of the one or more gate electrodes and electrically coupling theone or more shield electrodes to the source region.